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IXTA6N50D2 IXTP6N50D2
IXTH6N50D2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-220 Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 30V, I D = 3A, Note 1
V GS = -10V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = ± 5V, V DS = 250V, I D = 3A
R G = 2.4 Ω (External)
2.8
4.5
2800
255
64
28
72
82
43
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
V GS = 5V, V DS = 250V, I D = 3A
96
11
nC
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Q gd
48
nC
R thJC
R thCS
TO-220
TO-247
0.50
0.21
0.41 ° C/W
° C/W
° C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol
Test Conditions
Min. Typ. Max.
SOA
V DS = 400V, I D = 0.45A, T C = 75 ° C, Tp = 5s
180
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 Outline
V SD
t rr
I RM
Q RM
I F = 6A, V GS = -10V, Note 1
I F = 3A, -di/dt = 100A/ μ s
V R = 100V, V GS = -10V
0.8
350
16
2.8
1.3
V
ns
A
μ C
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
TO-263 Outline
Dim.
A
Millimeter
Min. Max.
4.06 4.83
Inches
Min. Max.
.160 .190
1 = Gate
2 = Drain
3 = Source
b
b2
c
c2
D
D1
E
0.51
1.14
0.40
1.14
8.64
8.00
9.65
0.99
1.40
0.74
1.40
9.65
8.89
10.41
.020
.045
.016
.045
.340
.280
.380
.039
.055
.029
.055
.380
.320
.405
1.
2.
3.
4.
Gate
Drain
Source
Drain
E1
e
L
L1
L2
L3
6.22
2.54
14.61
2.29
1.02
1.27
8.13
BSC
15.88
2.79
1.40
1.78
.270
.100
.575
.090
.040
.050
.320
BSC
.625
.110
.055
.070
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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